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UID:173-2170@www.eah-jena.de
CLASS: PUBLIC
SUMMARY:Gastvortrag »Atomic Diffusion Bonding of Wafers« am 07.10.2022 an d
 er EAH Jena
DESCRIPTION:Abstract Atomic diffusion bonding (ADB) of wafers is a promisin
 g process to achieve room-temperature bonding of wafers and substrates. In 
 standard ADB, thin metal films are fabricated on two flat wafer surfaces us
 ing sputter deposition, followed by bonding of the two films on the wafers 
 in vacuum. Recently we demonstrated ADB of wafers at room temperature using
  oxide films. No interface corresponding to the original film surface was o
 bserved (Figure 1), indicating high performance of bonding using Y2O3 films
 . Incident light can pass through transparent wafers bonded with oxide film
 s without reduction in intensity (Figure 2). Moreover, the bonded films sho
 w a good electrical insulation. Any mirror-polished wafer (substrate) and a
 ny material including polymer can be bonded at room temperature using vario
 us oxide films such as Y2O3, ZrO2, and Al2O3. These properties are useful f
 or optical applications (not only in wafer-level fabrications but also in o
 ptical parts fabrications) or to produce electrical devices. We present the
  technical potential and current status of ADB using oxide films.\n\n\n\n\n
 \nDer Vortrag findet an der EAH Jena im Hörsaal 5 (Raum 05.03.02) am Freita
 g, den 7. Oktober 2022 von 11:00 bis 12:00 Uhr statt.  
LOCATION:Veranstaltungsort
DTSTAMP:20221004T100628Z
DTSTART:20221007T090000Z
DTEND:20221007T100000Z
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